Chiral Photodetector Based on GaAsN

The detection of light helicity is key for various applications, from drug production to optical communications. However, the direct measurement inherently impossible with conventional photodetectors based on III–V or IV–VI non-chiral semiconductors. prior polarization analysis by often moving elements necessary before sent detector. A method here presented effectively give dilute nitride GaAs-based semiconductor epilayer a chiral photoconductivity. scheme relies giant spin-dependent recombination conduction electrons and accompanying spin engineered defects control band. As electron is, in turn, intimately linked excitation polarization, state intensity can be determined simple conductivity measurement. This approach, removing need any front detector, could offer easier integration miniaturization. new photodetector potentially operate spectral range visible infra-red using (InGaAl)AsN alloys ion-implanted nitrogen-free compounds.